UNIV. NEWS. NORTH-CAUCAS. REG. TECHNICAL SCIENCES SERIES. 2022; 4: 85-89
http://dx.doi.org/10.17213/1560-3644-2022-4-85-89
INFLUENCE OF THE PARAMETERS OF THE PROCESS OF ELECTRON-BEAM DEPOSITION ON THE OPTICAL PARAMETERS OF SILICON DIOXIDE FILMS
Zhikina Liudmila A. – Graduate Student, Department «Environmental Protection», Perm National Research Polytechnic University, Perm, Russia, lusyzh@gmail.com
Minkin Aleхandеr M. – Candidate of Technical Sciences, Senior Lecturer, Department «Physical Chemistry», Perm State National Research University Perm, Russia, minkin.90@gmail.com
Ketov Alexander A. – Doctor of Technical Sciences, Professor, Department «Environmental Protection», Perm National Research Polytechnic University, Perm, Russia, alexander_ketov@mail.ru
Izvarin Andrey I.– Graduate Student, Department «General Chemistry and Technology of Silicates», Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Russia, andre.izvarin@yandex.ru
Trofimov Sergei V.– Graduate Student, Department «General Chemistry and Technology of Silicates», Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Russia, 23zarj23@mail.ru
Abstract
An important parameter of silicon dioxide thin films used in integrated optics is the refractive index. One of the most common methods for depositing silicon dioxide films is electron beam evaporation. The parameters of the electron beam deposition process affect the microstructure and optical parameters of thin films. In this work, we studied the effect of the substrate temperature, oxygen pressure in a vacuum chamber, and deposition rate on the refractive index of silicon dioxide films. The thickness and refractive index were determined by waveguide spectroscopy on a Metricon 2010/M Prism Coupler instrument. It was found that with an increase in the substrate temperature, the refractive index increases, and then, at temperatures above 200 °С, it decreases. When oxygen is admitted into the vacuum chamber during deposition, a decrease in the refractive index of the film is observed. However, the refractive index increases with increasing deposition rate. Adjusting the deposition parameters listed above allowed us to obtain silicon dioxide films with a refractive index in the range from 1,455 to 1,469.
Keywords: silicon dioxide, electron beam deposition, thin films, refractive index
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